Motion image recognition is a critical component of internet of things (IoT) applications, necessitating advanced processing techniques for spatiotemporal data. Conventional feedforward neural networks (FNNs) often fail to effectively capture temporal dependencies. In this work, we propose an indium gallium zinc oxide (IGZO) thin-film transistor (TFT) gated by a hafnium oxide (HfO) dielectric layer, exhibiting voltage-modulated fading memory dynamics.
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