Publications by authors named "Jonathan W Hennek"

All matter has density. The recorded uses of density to characterize matter date back to as early as ca. 250 BC, when Archimedes was believed to have solved "The Puzzle of The King's Crown" using density.

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Iron deficiency anemia (IDA) is a nutritional disorder that impacts over one billion people worldwide; it may cause permanent cognitive impairment in children, fatigue in adults, and suboptimal outcomes in pregnancy. IDA can be diagnosed by detection of red blood cells (RBCs) that are characteristically small (microcytic) and deficient in hemoglobin (hypochromic), typically by examining the results of a complete blood count performed by a hematology analyzer. These instruments are expensive, not portable, and require trained personnel; they are, therefore, unavailable in many low-resource settings.

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This paper describes the design and fabrication of a "pop-up" electrochemical paper-based analytical device (pop-up-EPAD) to measure beta-hydroxybutyrate (BHB)-a biomarker for diabetic ketoacidosis-using a commercial combination BHB/glucometer. Pop-up-EPADs are inspired by pop-up greeting cards and children's books. They are made from a single sheet of paper folded into a three-dimensional (3D) device that changes shape, and fluidic and electrical connectivity, by simply folding and unfolding the structure.

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This paper describes a method of isolating small, highly accurate density-standard beads and characterizing their densities using accurate and experimentally traceable techniques. Density standards have a variety of applications, including the characterization of density gradients, which are used to separate objects in a variety of fields. Glass density-standard beads can be very accurate (±0.

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Despite the growth of research in universities on point-of-care (POC) diagnostics for global health, most devices never leave the laboratory. The processes that move diagnostic technology from the laboratory to the field--the processes intended to evaluate operation and performance under realistic conditions--are more complicated than they might seem. Two case studies illustrate this process: the development of a paper-based device to measure liver function, and the development of a device to identify sickle cell disease based on aqueous multiphase systems (AMPS) and differences in the densities of normal and sickled cells.

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Article Synopsis
  • - MagLev technology allows for quick and non-destructive quality checks on plastic components, making it easier to spot defects in injection-molded parts during production.
  • - It can track changes in plastic materials when they are subjected to tough environmental conditions, helping to assess durability and performance over time.
  • - The method is also capable of identifying counterfeit plastic materials based on their density, which could enhance material verification processes.
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Although simple and low-cost interventions for sickle cell disease (SCD) exist in many developing countries, child mortality associated with SCD remains high, in part, because of the lack of access to diagnostic tests for SCD. A density-based test using aqueous multiphase systems (SCD-AMPS) is a candidate for a low-cost, point-of-care diagnostic for SCD. In this paper, the field evaluation of SCD-AMPS in a large (n = 505) case-control study in Zambia is described.

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Although effective low-cost interventions exist, child mortality attributable to sickle cell disease (SCD) remains high in low-resource areas due, in large part, to the lack of accessible diagnostic methods. The presence of dense (ρ > 1.120 g/cm(3)) cells is characteristic of SCD.

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This paper describes an inexpensive, handheld device that couples the most common forms of electrochemical analysis directly to "the cloud" using any mobile phone, for use in resource-limited settings. The device is designed to operate with a wide range of electrode formats, performs on-board mixing of samples by vibration, and transmits data over voice using audio--an approach that guarantees broad compatibility with any available mobile phone (from low-end phones to smartphones) or cellular network (second, third, and fourth generation). The electrochemical methods that we demonstrate enable quantitative, broadly applicable, and inexpensive sensing with flexibility based on a wide variety of important electroanalytical techniques (chronoamperometry, cyclic voltammetry, differential pulse voltammetry, square wave voltammetry, and potentiometry), each with different uses.

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Solution-processed amorphous oxide semiconductors (AOSs) are emerging as important electronic materials for displays and transparent electronics. We report here on the fabrication, microstructure, and performance characteristics of inkjet-printed, low-temperature combustion-processed, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) grown on solution-processed hafnia self-assembled nanodielectrics (Hf-SANDs). TFT performance for devices processed below 300 °C includes >4× enhancement in electron mobility (μFE) on Hf-SAND versus SiO2 or ALD-HfO2 gate dielectrics, while other metrics such as subthreshold swing (SS), current on:off ratio (ION:IOFF), threshold voltage (Vth), and gate leakage current (Ig) are unchanged or enhanced.

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In oxide semiconductors, such as those based on indium zinc oxide (IXZO), a strong oxygen binding metal ion ("oxygen getter"), X, functions to control O vacancies and enhance lattice formation, hence tune carrier concentration and transport properties. Here we systematically study, in the IXZO series, the role of X = Ga(3+) versus the progression X = Sc(3+) → Y(3+) → La(3+), having similar chemical characteristics but increasing ionic radii. IXZO films are prepared from solution over broad composition ranges for the first time via low-temperature combustion synthesis.

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Polymer semiconductors have received great attention for organic electronics due to the low fabrication cost offered by solution-based printing techniques. To enable the desired solubility/processability and carrier mobility, polymers are functionalized with hydrocarbon chains by strategically manipulating the alkylation patterns. Note that head-to-head (HH) linkages have traditionally been avoided because the induced backbone torsion leads to poor π-π overlap and amorphous film microstructures, and hence to low carrier mobilities.

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Concentration of light and infrared capture are two favored approaches for increasing the power conversion efficiency (PCE) of photovoltaic devices. Using optical transfer matrix formalism, we model the absorption of organic photovoltaic films as a function of active layer thickness and incident wavelength. In our simulations we consider the absorption in the optical cavity formed by the polymer bulk heterojunction active layer (AL) between the aluminum cathode and indium tin oxide (ITO) anode.

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Concentration of light and infrared capture are two favored approaches for increasing the power conversion efficiency (PCE) of photovoltaic devices. Using optical transfer matrix formalism, we model the absorption of organic photovoltaic films as a function of active layer thickness and incident wavelength. In our simulations we consider the absorption in the optical cavity formed by the polymer bulk heterojunction active layer (AL) between the aluminum cathode and indium tin oxide (ITO) anode.

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Rational creation of polymeric semiconductors from novel building blocks is critical to polymer solar cell (PSC) development. We report a new series of bithiopheneimide-based donor-acceptor copolymers for bulk-heterojunction (BHJ) PSCs. The bithiopheneimide electron-deficiency compresses polymer bandgaps and lowers the HOMOs--essential to maximize power conversion efficiency (PCE).

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A solution-processed small molecule utilizing a novel 5,10-bis((2-ethylhexyl)oxy)-naphtho[2,3-b:6,7-b0]dithiophene [corrected] "zig-zag" core (zNDT) exhibits high hole mobility, upshifted frontier MO energies, and enhanced photovoltaic cell short-circuit currents, fill-factors, and power conversion efficiencies (4.7%) versus the linear NDT isomer.

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Organic thin film transistor (OTFT) performance is highly materials interface-dependent, and dramatic performance enhancements can be achieved by properly modifying the semiconductor/gate dielectric interface. However, the origin of these effects is not well understood, as this is a classic "buried interface" problem that has traditionally been difficult to address. Here we address the question of how n-octadecylsilane (OTS)-derived self-assembled monolayers (SAMs) on Si/SiO(2) gate dielectrics affect the OTFT performance of the archetypical small-molecule p-type semiconductors P-BTDT (phenylbenzo[d,d]thieno[3,2-b;4,5-b]dithiophene) and pentacene using combined in situ sum frequency generation spectroscopy, atomic force microscopy, and grazing incidence and reflectance X-ray scattering.

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Delayed ignition of combustion synthesis precursors can significantly lower metal oxide film formation temperatures. From bulk In(2)O(3) precursor analysis, it is shown here that ignition temperatures can be lowered by as much as 150 °C. Thus, heat generation from ~60 nm thick In(2)O(3) films is sufficient to form crystalline In(2)O(3) films at 150 °C.

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We report the implementation of amorphous indium yttrium oxide (a-IYO) as a thin-film transistor (TFT) semiconductor. Amorphous and polycrystalline IYO films were grown via a low-temperature solution process utilizing exothermic "combustion" precursors. Precursor transformation and the IYO films were analyzed by differential thermal analysis, thermogravimetric analysis, X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and optical transmission, which reveal efficient conversion to the metal oxide lattice and smooth, transparent films.

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Solution processing of amorphous metal oxide materials to fabricate thin-film transistors (TFTs) has received great recent interest. We demonstrate here an optimized "ink" and printing process for inkjet patterning of amorphous indium gallium zinc oxide (a-IGZO) TFTs and investigate the effects of device structure on derived electron mobility. Bottom-gate top-contact (BGTC) TFTs are fabricated and shown to exhibit electron mobilities comparable to a-Si:H.

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Optically transparent and mechanically flexible thin-film transistors (TF-TFTs) composed exclusively of amorphous metal oxide films are fabricated on plastic substrates by combining an amorphous Ta(2)O(5)/SiO(x) bilayer transparent oxide insulator (TOI) gate dielectric with an amorphous zinc-indium-tin oxide (a-ZITO) transparent oxide semiconductor (TOS) channel and a-ZITO transparent oxide conductor (TOC) electrodes. The bilayer gate dielectric is fabricated by the post-cross-linking of vapor-deposited hexachlorodisiloxane-derived films to form thin SiO(x) layers (v-SiO(x)) on amorphous Ta(2)O(5) (a-Ta(2)O(5)) films grown by ion-assisted deposition at room temperature. The a-Ta(2)O(5)/v-SiO(x) bilayer TOI dielectric integrates the large capacitance of the high dielectric constant a-Ta(2)O(5) layer with the excellent dielectric/semiconductor interfacial compatibility of the v-SiO(x) layer in a-ZITO TOS-based TF-TFTs.

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