Vapor-Deposited MOF for Low-k Dielectric Seamless High-Aspect-Ratio Interconnect Gap Fill.

A vapor-phase ZIF-8 MOF deposition procedure for seamless high-aspect-ratio interconnect gap fill has been developed with a short process time (15 min) at a 160 °C process temperature. This is the most rapid documented vapor technique to produce a MOF film and is made possible by a higher process temperature and a low background HO environment. The process consists of ALD of a thin (<5 nm) ZnO film followed by conversion to ZIF-8 in an organic linker (ALD + soak cycle).

Synergistic effects of Ga doping and Mg alloying over the enhancement of the stress sensitivity of a Ga-doped MgZnO pressure sensor.

We demonstrate the synergistic effects of Ga doping and Mg alloying into ZnO on the large enhancement of the piezopotential and stress sensing performance of piezotronic pressure sensors made of Ga-doped MgZnO films. Piezopotential-induced pressure sensitivity was enhanced through the modulation of the Schottky barrier height. Doping with Ga (0.

AlN-SWCNT Metacomposites Having Tunable Negative Permittivity in Radio and Microwave Frequencies.

Discovery of plasmon resonance and negative permittivity in carbon allotropes at much lower frequencies than those of metals has evoked interest to develop random metacomposites by suitable means of addition of these dispersoids in an overall dielectric matrix. Random metacomposites have always the advantage for their easy preparation techniques over those of their regular arrayed artificial counterpart. However, thermal management during the heat generation by electromagnetic attenuation in metamaterials is not yet studied well.