Micromachines (Basel)
June 2025
To enhance the DC and RF performance of AlGaN/GaN HEMTs, a novel device structure was proposed and investigated through simulation. The key innovation of this new structure lies in the incorporation of an AlInGaN back-barrier layer and an N-type locally doped AlGaN barrier layer (BD-HEMT), based on conventional device architecture. The AlInGaN back-barrier layer effectively confines electrons within the channel, thereby increasing the electron concentration.
View Article and Find Full Text PDFBackground: In image processing, image segmentation is a more challenging task due to different shapes, locations, image intensities, etc. Brain tumors are one of the most common diseases in the world. So, the detection and segmentation of brain tumors are important in the medical field.
View Article and Find Full Text PDFThe voyage of semiconductor industry to decrease the size of transistors to achieve superior device performance seems to near its physical dimensional limitations. The quest is on to explore emerging material systems that offer dimensional scaling to match the silicon- based technologies. The discovery of atomic flat two-dimensional materials has opened up a completely new avenue to fabricate transistors at sub-10 nanometer level which has the potential to compete with modern silicon-based semiconductor devices.
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July 2022
During the outbreak of the COVID-19 illness, mRNA (messenger RNA) injections proved to be effective vaccination. Among the presently available analytical techniques, UV/VIS spectrophotometry is a trustworthy and practical instrument that may provide information on the chemical components of the vaccine at the molecular level. In this paper, we will present a one-dimensional grating of InGaAs as a prospect grating structure for UV-VIS spectrometer that can be used for mRNA vaccine development.
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