Chemical mechanical planarization (CMP) is an indispensable technique for achieving global planarization in shallow trench isolation (STI) structures, a critical component in modern integrated circuits. With the continuous advancement of technology and increasing demands for chip performance, the critical metrics of STI CMP processes have become increasingly stringent, placing higher requirements on the performance of polishing slurries. In particular, SiO/SiN removal rate selectivity (RRS) and surface flatness directly impact product quality and yield.
View Article and Find Full Text PDFThe aim of this study was to investigate the correlations between the morphology and microbial community structure of Medicago ruthenica and soil environmental factors. Soil samples were collected from M. ruthenica and from rhizosphere and non-rhizosphere soils under typical grasslands (C1), desertified grasslands (C2) and wetland meadows (C3).
View Article and Find Full Text PDFChemical mechanical polishing (CMP) represents one of the most important steps in the manufacturing of integrated circuits, and high surface quality is always required for the CMP processes of shallow trench isolation (STI) structures. Herein, a new series of polydopamine (PDA)-coated cerium oxide core-shell nanoparticles has been developed as efficient and non-damaging abrasives for CMP of SiO on the surface of silicon wafers. The composite abrasives with the structure of SiO@CeO@PDA have been fabricated in a simple manner and thoroughly characterized using scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy.
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