Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors.

This study investigates the effects of negative bias temperature (NBT) stress and irradiation on the threshold voltage () of p-channel VDMOS transistors, focusing on degradation, recovery after each type of stress, and operational behavior under varying conditions. Shifts in (Δ) were analyzed under different stress orders, showing distinct influence mechanisms, including defects creation and their removal and electrochemical reactions. Recovery data after each type of stress indicated ongoing electrochemical processes, influencing subsequent stress responses.

Peculiarities of Electric and Dielectric Behavior of Ni- or Fe-Doped ZnO Thin Films Deposited by Atomic Layer Deposition.

The physical properties of ZnO can be tuned efficiently and controllably by doping with the proper element. Doping of ZnO thin films with 3D transition metals that have unpaired electron spins (e.g.

A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress.

This study aimed to comprehensively understand the performance and degradation of both p- and n-channel vertical double diffused MOS (VDMOS) transistors under bias temperature stress. Conducted experimental investigations involved various stress conditions and annealing processes to analyze the impacts of BT stress on the formation of oxide trapped charge and interface traps, leading to threshold voltage shifts. Findings revealed meaningful threshold voltage shifts in both PMOS and NMOS devices due to stresses, and the subsequent annealing process was analyzed in detail.

A Novel Approach to Obtaining Metal Oxide HAR Nanostructures by Electrospinning and ALD.

In this work, a novel approach is suggested to grow bilayer fibers by combining electrospinning and atomic layer deposition (ALD). Polyvinyl alcohol (PVA) fibers are obtained by electrospinning and subsequently covered with thin AlO deposited at a low temperature by ALD. To burn the PVA core, the fibrous structures are subjected to high-temperature annealing.

Strong Magneto-Optical Kerr Effects in Ni-Doped ZnO Nanolaminate Structures Obtained by Atomic Layer Deposition.

The magneto-optical (MO) Kerr effects for ZnO and ZnO:Ni-doped nanolaminate structures prepared using atomic layer deposition (ALD) have been investigated. The chemical composition and corresponding structural and morphological properties were studied using XRD and XPS and compared for both nanostructures. The 2D array gradient maps of microscale variations of the Kerr angle polarization rotation were acquired by means of MO Kerr microscopy.

Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO/AlO Nanolaminated Stacks.

The requirements for ever-increasing volumes of data storage have urged intensive studies to find feasible means to satisfy them. In the long run, new device concepts and technologies that overcome the limitations of traditional CMOS-based memory cells will be needed and adopted. In the meantime, there are still innovations within the current CMOS technology, which could be implemented to improve the data storage ability of memory cells-e.

Magneto-Optical and Muliferroic Properties of Transition-Metal (Fe, Co, or Ni)-Doped ZnO Layers Deposited by ALD.

ZnO doped with transition metals (Co, Fe, or Ni) that have non-compensated electron spins attracts particular interest as it can induce various magnetic phenomena and behaviors. The advanced atomic layer deposition (ALD) technique makes it possible to obtain very thin layers of doped ZnO with controllable thicknesses and compositions that are compatible with the main microelectronic technologies, which further boosts the interest. The present study provides an extended analysis of the magneto-optical MO Kerr effect and the dielectric properties of (Co, Fe, or Ni)-doped ZnO films prepared by ALD.

Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO/AlO-Based Charge Trapping Layers.

Flash memories are the preferred choice for data storage in portable gadgets. The charge trapping nonvolatile flash memories are the main contender to replace standard floating gate technology. In this work, we investigate metal/blocking oxide/high-k charge trapping layer/tunnel oxide/Si (MOHOS) structures from the viewpoint of their application as memory cells in charge trapping flash memories.

Radiation Tolerance and Charge Trapping Enhancement of ALD HfO/AlO Nanolaminated Dielectrics.

High- dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO/AlO stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient.

Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping.

In this work dielectric and electrical properties of Al-doped HfO2 layers deposited by plasma-enhanced atomic layer deposition in dependence on the thickness and the added Al amount in the films have been investigated. Special attention is dedicated to C-V and I-V hysteresis analysis as a measure for trapping phenomena in the films. A detailed study of conduction mechanisms in dependence on the composition of the layers has also been performed.