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RSC Adv
July 2025
Department of Physics, University of Science and Technology of China Hefei 230026 China
Due to the exceptional physical and chemical properties, vanadium nitride (VN) films exhibit significant potential for a wide range of applications. However, their non-layered structure has hindered their integration into two-dimensional nano-electronic devices, primarily due to the challenges associated with synthesizing well-defined 2D films. This study proposed an efficient method for the synthesis of 2D vanadium nitride films through a two-step growth process that combines chemical vapor deposition with atomic substitution.
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