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Nanoscale Adv
May 2025
Department of Electrical Engineering, Pohang University of Science and Technology Cheongam-ro 77, Nam-gu Pohang Gyeongbuk 37673 Republic of Korea
Multi-valued logic is the subject of ongoing investigation owing to its potential to reduce the complexity of logic circuits and interconnect lengths, thereby reducing system power consumption. In this work, ternary stack channel field-effect transistors (SCFETs) are used as unit devices to realize multi-valued logic. The thickness of each ZnO layer in the SCFET is modulated to obtain the device parameters to control the intermediate-state range and saturation current.
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