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To achieve high detectivity in organic photodetectors, the suppression of the dark current density and the improvement of responsivity are necessary at the same time. In this work, we introduce a polymer donor overlayer on top of the high-acceptor-content bulk heterojunction film to minimize the randomness of charge pathways in the mixed phase of donor/acceptor blends. This design strategy of the active layer successfully suppresses the dark current density to 2.91 × 10 A cm at an applied voltage of -2 V; hence, it achieves the high detectivity of 3.63 × 10 cm Hz W (only considering short noise) and 1.12 × 10 cm Hz W (including by thermal and flicker noise) with enhancing responsivity under near-infrared illumination after introducing the polymer overlayer. Further, the reduction of the donor/acceptor interface in bulk heterojunctions enables our photodetector to maintain over 98% of its initial detectivity after 1000 h under 85 °C thermal stress. This study demonstrates a simple yet effective way to establish a unipolar charge pathway for high detectivity organic photodetectors by designing the photoactive layer.
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http://dx.doi.org/10.1021/acsami.5c11989 | DOI Listing |
ACS Appl Mater Interfaces
September 2025
Department of Organic and Nano Engineering, and Human-Tech Convergence Program, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
Photomultiplication-type organic photodetectors (PM-type OPDs) have recently attracted attention. However, the development of polymer donors specifically tailored for this architecture has rarely been reported. In this study, we synthesized benzobisoxazole-based polymer donors incorporating alkylated π-spacers that simultaneously enhance photocurrent density () and suppress dark current density (), leading to high responsivity () and specific detectivity (*).
View Article and Find Full Text PDFACS Nano
September 2025
School of Microelectronics, Hefei University of Technology, Hefei 230009, China.
Near-infrared (NIR) narrowband photodetectors, featuring high sensitivity, excellent wavelength selectivity, and narrow full width at half-maximum (fwhm), enable efficient detection of specific NIR wavelengths and are widely used in optical communication, environmental monitoring, spectroscopy, and scientific research. In this study, we present a self-powered NIR photodetector based on a silicon nanowire (SiNW) array, exhibiting an ultranarrowband response centered at 1120 nm. The device employs a simple Schottky junction architecture.
View Article and Find Full Text PDFJ Colloid Interface Sci
September 2025
College of Physics and Electronic Information, Yunnan Key Laboratory of Optoelectronic Information Technology, Yunnan Normal University, Kunming 650500, China. Electronic address:
Antimony trisulfide (SbS) has emerged as a promising inorganic semiconductor for optoelectronics due to its distinctive anisotropic crystal structure and suitable bandgap (∼1.7 eV). While hydrothermal synthesis remains challenging for achieving high crystallinity and controlled morphology, we developed an innovative dual‑sulfur precursor strategy utilizing sodium thiosulfate (STS) and thioacetamide (TAA) at a 7:2 M ratio with SbCl.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
Center for Graphene Research and Innovation, University of Mississippi, University, Mississippi 38677, United States.
To assess the efficacy of a mixed-dimensional van der Waals (vdW) heterostructure in modulating the optoelectronic responses of nanodevices, the charge transport properties of the transition-metal dichalcogenide (TMD)-based heterostructure comprising zero-dimensional (0D) WS quantum dots (QDs) and two-dimensional (2D) MoS flakes are critically analyzed. Herein, a facile strategy was materialized in developing an atomically thin phototransistor assembled from mechanically exfoliated MoS and WS QDs synthesized using a one-pot hydrothermal route. The amalgamated photodetectors exhibited a high responsivity of ∼8000 A/W at an incident power of 0.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2025
Graduate Department of Chemical Materials, Institute for Plastic Information and Energy Materials, Sustainable Utilization of Photovoltaic Energy Research Center, Pusan National University, Busan 46241, Republic of Korea.
To achieve high detectivity in organic photodetectors, the suppression of the dark current density and the improvement of responsivity are necessary at the same time. In this work, we introduce a polymer donor overlayer on top of the high-acceptor-content bulk heterojunction film to minimize the randomness of charge pathways in the mixed phase of donor/acceptor blends. This design strategy of the active layer successfully suppresses the dark current density to 2.
View Article and Find Full Text PDF