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Article Abstract
We demonstrate Si-based InGaAs/InP Multiple Quantum Well (MQW) photodetectors integrated with a dielectric metasurface (DM) structure, achieving 11.8 times photocurrent enhancement and 4.65 times responsivity improvement compared to conventional devices. FDTD simulations reveal optimized light-matter interactions within the DM structure, correlating with experimental observation. The devices exhibit a low dark current of 9 × 10 μA and superior linearity in the photoelectric response curve, validating their potential for high-performance near-infrared detection.
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| http://dx.doi.org/10.1364/OL.571713 | DOI Listing |
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