Research on the asymmetric phase-shift laterally-coupled DFB semiconductor lasers with high single longitudinal mode yield.

In this paper, we report on our investigation of a high-power laterally coupled distributed feedback (LC-DFB) semiconductor laser with high-reflection (HR) and anti-reflection (AR) coatings and with an asymmetric phase-shift (APS) grating structure. The high-power single-mode output characteristics of the devices are achieved by introducing an APS structure within the laterally coupled grating while maintaining a high single longitudinal mode (SLM) yield when the phase of the HR-coated facet changes randomly. Both our theoretical analysis and experimental work show that the HR-AR-APS LC-DFB laser can achieve high-power single-mode characteristics with a high SLM yield, demonstrating significant potential for many applications.