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Bandgap engineering is the process of modifying a material's electronic structure to optimize its bandgap for specific applications. Applying pressure is an effective technique to alter a material's physical properties to meet device requirements. In this manuscript, we have investigated the impact of bandgap engineering through pressure application on the physical characteristics of AcGaO. Using the Wien2K code and the FP-LAPW method, we evaluated the material's properties under pressures ranging from 0 to 30 GPa, with additions of 5 GPa in each calculation. The Modified Becke-Johnson approximation was employed to accurately account for exchange-correlation effects. The elastic constants show a significant decrease with increasing pressure, indicating a reduction in the material's resistance to external strain. Lower speed values of the elastic waves suggest that the atomic bonding becomes weaker as the pressure is enhanced. Similarly, the Debye and melting temperatures decline as pressure increases. Electronic properties reveal a reduction in the indirect bandgap, while optical properties exhibit a shift from the higher energy region to the lower energy region under elevated pressures. The optical properties report a significant reduction in the polarization ability, absorption, and conductivity as the pressure is increased. This approach opens new possibilities for technological applications, as AcGaO's reduced bandgap and optical characteristics in the visible area make it an attractive contender for next-generation optoelectronic and energy storage devices.
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http://dx.doi.org/10.1002/jcc.70199 | DOI Listing |
Rev Sci Instrum
September 2025
Department of Nuclear Engineering, University of California, Berkeley, Berkeley, California 94720, USA.
Current and future searches for dark matter axions, based on their resonant conversion to photons in a magnetic field, span many orders of magnitude. A major impediment to designing resonators at the high end of this range, 5 GHz and above, is the proliferation of TE modes, which overwhelm and hybridize with the TM010 mode to which the axion couples, making the search impossible. We demonstrate that a photonic bandgap structure can be designed that completely suppresses the TE spectrum, even reducing the number of lattice periods to two or one and violating perfect lattice symmetry.
View Article and Find Full Text PDFDue to its sizable direct bandgap and strong light-matter interactions, the preparation of monolayer MoS has attracted significant attention and intensive research efforts. However, multilayer MoS is largely overlooked because of its optically inactive indirect bandgap caused by interlayer coupling. It is highly desirable to modulate and decrease the interlayer coupling so that each layer in multilayer MoS can exhibit a monolayer-like direct-gap behavior.
View Article and Find Full Text PDFThe formation of heterostructure interfaces from quantum dots (or nanocrystals) and lower-dimensional (2D or quasi-2D) materials enables interfacial and optoelectronic property tuning. However, this strategy has not been sufficiently characterized, for example, the application of cesium halide nanocrystals to quasi-2D perovskite structures is underexplored, and the mechanisms of the resulting structural modifications and specific nanocrystal roles are not fully understood. Herein, the effects of postsynthetically surface-modifying quasi-2D perovskite films with CsX ( = Cl, Br, I) nanocrystals are examined to bridge this gap.
View Article and Find Full Text PDFPhys Chem Chem Phys
September 2025
Department of Physics, Mizoram University, Aizawl-796004, India,.
It is anticipated that wide-bandgap semiconductors (WBGSs) would be useful materials for energy production and storage. A well-synthesized, yet scarcely explored, diamond-like quaternary semiconductor LiZnGeS has been considered for this work. Herein, we have employed two well-known functionals GGA and mGGA within a framework of density functional theory (DFT).
View Article and Find Full Text PDFNanoscale
September 2025
School of Chemical Engineering, Engineering Research Center of Synthetic Resin and Special Fiber, Ministry of Education, Changchun University of Technology, Changchun 130012, China.
Electronic capacitor films based on polymer matrices and inorganic nanofillers capable of storing more energy play a crucial role in advanced modern electrical industries and devices. Herein, a series of nanocomposite films composed of "core-shell-dot" BNNs-PDA@Ag hybrid structures with multiple breakdown strength enhancement mechanisms as fillers and methyl methacrylate--glycidyl methacrylate (MG) copolymers as matrices were successfully synthesized. The introduced 2D and wide-bandgap BNNs not only enhanced the breakdown strength by taking advantage of their excellent physical properties, but also further improved their energy storage properties both at ambient and elevated temperatures through the formation of deeper traps at the organic-inorganic interface.
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