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Article Abstract
Directed self-assembly (DSA) lithography, a cutting-edge technology based on the self-assembly of block copolymers (BCPs), has received significant attention in recent years. Combining DSA with established lithography technologies, such as extreme ultraviolet (EUV), deep ultraviolet (DUV), electron beam lithography, and nanoimprint lithography, significantly enhances the resolution of target patterns and device density. Currently, there are two commonly used methods in DSA: graphoepitaxy, employing lithographically defined topographic templates to guide BCP assembly, and chemoepitaxy, utilizing chemically patterned surfaces with precisely controlled interfacial energies to direct nanoscale phase segregation. Through novel DSA lithography technology, nanoscale patterns with smaller feature sizes and higher densities can be obtained, realizing the miniaturization of hole and line patterns and pitch multiplication and improving the roughness and local critical dimension uniformity (LCDU). It is gradually becoming one of the most promising and advanced lithography techniques. DSA lithography technology has been applied in logic, memory, and optoelectronic device fabrications.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC12194818 | PMC |
| http://dx.doi.org/10.3390/mi16060667 | DOI Listing |
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