Severity: Warning
Message: file_get_contents(https://...@gmail.com&api_key=61f08fa0b96a73de8c900d749fcb997acc09&a=1): Failed to open stream: HTTP request failed! HTTP/1.1 429 Too Many Requests
Filename: helpers/my_audit_helper.php
Line Number: 197
Backtrace:
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 197
Function: file_get_contents
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 271
Function: simplexml_load_file_from_url
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 3165
Function: getPubMedXML
File: /var/www/html/application/controllers/Detail.php
Line: 597
Function: pubMedSearch_Global
File: /var/www/html/application/controllers/Detail.php
Line: 511
Function: pubMedGetRelatedKeyword
File: /var/www/html/index.php
Line: 317
Function: require_once
98%
921
2 minutes
20
Developing a cost-effective sensing material capable of detecting HS with ultra-sensitivity, ultra-selectivity, and low detection limits at room temperature remains highly anticipated. In this paper, two-dimensional (2D) porous InO nanosheets were prepared by a simple solvothermal method, and then CuO was modified on the InO surface by impregnation. The CuO/InO two-dimensional porous structure allows the fabricated sensor to be highly sensitive to HS at room temperature. Modifying CuO on InO significantly improves the response (R/R) to 10 ppm HS from 26 to 58000 at room temperature, while the response to other interfering gases (even 10 times the concentration of HS) not exceeding 5. After loading CuO, the response time was shortened from 56 s to 2 s, and the detection limit was reduced from 500 ppb to 50 ppb. Meanwhile, CuO/InO also has good repeatability and long-term stability, and full recovery can be achieved by pulse heating. The gas sensing and characterization results demonstrate that the excellent sensing performance of CuO/InO for HS at room temperature is due to the specific porous nanosheets morphology and structure of the material, the strong chemical affinity of alkaline CuO for HS, as well as the formation of p-n heterojunctions.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1016/j.jhazmat.2025.138355 | DOI Listing |