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Article Abstract

The present work investigates the interfacial and atomic layer-dependent mechanical properties, SOC-entailing phonon band structure, and comprehensive electron-topological-elastic integration of ZrTe and NiTe. The anisotropy of Young's modulus, Poisson's ratio, and shear modulus are analyzed using density functional theory with the TB-mBJ approximation. NiTe has higher mechanical property values and greater anisotropy than ZrTe. Phonon dispersion analysis with SOC effects predicts the dynamic stability of both compounds. Thus, the current research unifies electronic band structure analysis, topological characterization, and elastic property calculation to reveal how these transition metal dichalcogenides are influenced by their structural, electronic, and mechanical properties. The results obtained in this work can be used in the further development of spintronic and nanoelectronic devices.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11767248PMC
http://dx.doi.org/10.3390/nano15020148DOI Listing

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The present work investigates the interfacial and atomic layer-dependent mechanical properties, SOC-entailing phonon band structure, and comprehensive electron-topological-elastic integration of ZrTe and NiTe. The anisotropy of Young's modulus, Poisson's ratio, and shear modulus are analyzed using density functional theory with the TB-mBJ approximation. NiTe has higher mechanical property values and greater anisotropy than ZrTe.

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