98%
921
2 minutes
20
Photodetectors are one of the most critical components for future optoelectronic systems and it undergoes significant advancements to meet the growing demands of diverse applications spanning the spectrum from ultraviolet (UV) to terahertz (THz). 2D materials are very attractive for photodetector applications because of their distinct optical and electrical properties. The atomic-thin structure, high carrier mobility, low van der Waals (vdWs) interaction between layers, relatively narrower bandgap engineered through engineering, and significant absorption coefficient significantly benefit the chip-scale production and integration of 2D materials-based photodetectors. The extremely sensitive detection at ambient temperature with ultra-fast capabilities is made possible with the adaptability of 2D materials. Here, the recent progress of photodetectors based on 2D materials, covering the spectrum from UV to THz is reported. In this report, the interaction of light with 2D materials is first deliberated on in terms of optical physics. Then, various mechanisms on which detectors work, important performance parameters, important and fruitful fabrication methods, fundamental optical properties of 2D materials, various types of 2D materials-based detectors, different strategies to improve performance, and important applications of photodetectors are discussed.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1002/smll.202402668 | DOI Listing |
ACS Appl Mater Interfaces
March 2025
School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China.
The photoelectronic properties and corresponding applications of halide perovskites significantly depend on their band gaps and formation energy. However, experiments and density functional theory (DFT) calculations are usually time consuming and laborious to obtain these properties. In this study, the formation energy, band gap, and band gap classification label of halide double perovskites were predicted in terms of material parameters via using the gradient boosting tree combined with the genetic algorithm and grid search algorithm.
View Article and Find Full Text PDFAdv Mater
April 2025
Department of Materials Science and State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, P. R. China.
2D materials possess exceptional carrier transport properties and mechanical stability despite their ultrathin nature. In this context, the coupling between polarization fields and photoelectric fields has been proposed to modulate the physical properties of 2D materials, including energy band structure, carrier mobility, as well as the dynamic processes of photoinduced carriers. These strategies have led to significant improvements in the performance, functionality, and integration density of 2D materials -based photodetectors.
View Article and Find Full Text PDFAdv Healthc Mater
March 2025
Harvard Medical School, Harvard University, Boston, MA, 02115, USA.
Ultra-broadband photodetectors (UB-PDs) are essential in medical applications, public safety monitoring, and various other fields. However, developing UB-PDs covering multiple bands from ultraviolet to medium infrared remains a challenge due to material limitations. Here, a mixed-dimensional heterojunction composed of 2D WS/monodisperse hexagonal stacking (MHS) 3D PdTe particles on 3D Si is proposed, capable of detecting light from 365 to 9600 nm.
View Article and Find Full Text PDFJ Colloid Interface Sci
February 2025
College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083 Shanghai, China. Electronic address:
Two-dimensional (2D) layered group-IV monochalcogenides with large surface-to-volume ratio and high surface activity make that their structural and optoelectronic properties are sensitive to air oxidation. Here, we report the utilization of oxidation-induced gradient doping to modulate electronic structures and optoelectronic properties of 2D group-IV monochalcogenides by using SnS nanoplates grown by physical vapor deposition as a model system. By a precise control of oxidation time and temperature, the structural transition from SnS to SnSO could be driven by the layer-by-layer oxygen doping and intercalation.
View Article and Find Full Text PDFJ Phys Condens Matter
November 2024
School of Physical Science and Technology, Southwest University, Chongqing 400715, People's Republic of China.
Heterostructures, such as van der Waals (vdW) heterostructures, provide a versatile platform for engineering the physical properties of two-dimensional (2D) layered materials, spanning electronics, mechanics, optics, as well as electron-phonon couplings. Furthermore, vdW heterostructures, which are composed of metal/semiconductor or semiconductor/semiconductor combinations, not only maintain the unique properties of their individual constituents but also exhibit tunable physical and chemical properties that can be externally adjusted through strain, heat, and electric fields. These externally tunable properties offer significant advances in the fields of solid-state devices and renewable energy applications.
View Article and Find Full Text PDF