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Piezoelectric c-axis oriented zinc oxide (ZnO) thin films, from 1.8 up to 6.6 µm thick, have been grown by the radio frequency magnetron sputtering technique onto fused silica substrates. A delay line consisting of two interdigital transducers (IDTs) with wavelength λ = 80 µm was photolithographically implemented onto the surface of the ZnO layers. Due to the IDTs' split-finger configuration and metallization ratio (0.5), the propagation of the fundamental, third, and ninth harmonic Rayleigh waves is excited; also, three leaky surface acoustic waves (SAWs) were detected travelling at a velocity close to that of the longitudinal bulk wave in SiO. The acoustic waves' propagation in ZnO/fused silica was simulated by using the 2D finite-element method (FEM) technique to identify the nature of the experimentally detected waves. It turned out that, in addition to the fundamental and harmonic Rayleigh waves, high-frequency leaky surface waves are also excited by the harmonic wavelengths; such modes are identified as Sezawa waves under the cut-off, hereafter named leaky Sezawa (LS). The velocities of all the modes was found to be in good agreement with the theoretically calculated values. The existence of a low-loss region in the attenuation vs. layer thickness curve for the Sezawa wave below the cut-off was theoretically predicted and experimentally assessed.
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http://dx.doi.org/10.3390/mi15080974 | DOI Listing |
Sensors (Basel)
October 2024
Research Center in Industrial Technologies CRTI, P.O. Box 64 Cheraga, Algiers 16014, Algeria.
The acoustoelectric (AE) effect induced by the absorption of ultraviolet (UV) light at 365 nm in piezoelectric ZnO films was theoretically and experimentally studied. c-ZnO films 4.0 µm thick were grown by the RF reactive magnetron sputtering technique onto fused silica substrates at 200 °C.
View Article and Find Full Text PDFMicromachines (Basel)
July 2024
Institute of Microelectronics and Microsystems, IMM-CNR, Via del Fosso del Cavaliere 100, 00133 Rome, Italy.
Piezoelectric c-axis oriented zinc oxide (ZnO) thin films, from 1.8 up to 6.6 µm thick, have been grown by the radio frequency magnetron sputtering technique onto fused silica substrates.
View Article and Find Full Text PDFSensors (Basel)
April 2023
Department of Information Engineering, Electronics and Telecommunications, Sapienza University of Rome, Via Eudossiana 18, 00184 Rome, Italy.
Zinc oxide (ZnO) thin films have been grown by radio frequency sputtering technique on fused silica substrates. Optical and morphological characteristics of as-grown ZnO samples were measured by various techniques; an X-ray diffraction spectrum showed that the films exhibited hexagonal wurtzite structure and were c-axis-oriented normal to the substrate surface. Scanning electron microscopy images showed the dense columnar structure of the ZnO layers, and light absorption measurements allowed us to estimate the penetration depth of the optical radiation in the 200 to 480 nm wavelength range and the ZnO band-gap.
View Article and Find Full Text PDFSensors (Basel)
March 2023
Institute for Photonics and Nanotechnology, IFN-CNR, Via del Fosso del Cavaliere 100, 00133 Rome, Italy.
The acousto-electric (AE) effect associated with the propagation of Rayleigh and Sezawa surface acoustic waves (SAWs) in ZnO/fused silica was theoretically investigated under the hypothesis that the electrical conductivity of the piezoelectric layer has an exponentially decaying profile akin to the photoconductivity effect induced by ultra-violet illumination in wide-band-gap photoconducting ZnO. The calculated waves' velocity and attenuation shift vs. ZnO conductivity curves have the form of a -relaxation response, as opposed to a -relaxation response which characterizes the AE effect due to surface conductivity changes.
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