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Ion migration is significantly enhanced in lead-halide perovskites with a soft crystal lattice, which can promote the formation of a heterogeneous interface between two such materials with different halide-anion compositions. Here we have deposited a single CsPbI nanocrystal (NC) on top of an individual CsPbBr microplate to create a mixed-halide CsPbBrI (0 < < 3) NC by means of the anion exchange process. The formation of a CsPbBrI/CsPbBr heterostructure is confirmed by the much-enlarged geometric volume of the CsPbBrI NC as compared to the original CsPbI one, as well as by its capability of receiving photogenerated excitons from the CsPbBr microplate with a larger bandgap energy. The quantum nature of this heterostructure is reflected from single-photon emission of the composing CsPbBrI NC, which can also be bulk-like during phase segregation to demonstrate a red shift in the photoluminescence peak that is opposite to the common trend observed in smaller-sized mixed-halide NCs.
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http://dx.doi.org/10.1021/acs.jpclett.4c01312 | DOI Listing |
ACS Appl Mater Interfaces
September 2025
National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
For optoelectronic devices based on lead-halide perovskites and other semiconductors, a comprehensive understanding of the electric field influences on the carrier transport characteristics is critical to the optimization of their practical performances. To fulfill this challenging goal, here we have employed photoluminescence spatial image and transient absorption microscopy measurements on an individual CsPbBr microplate biased at external voltages in an Au/CsPbBr/Au device. At the subpicosecond time scale, some photogenerated excitons are dissociated into free electrons and holes that drift toward the electrodes to leave behind unfilled defect sites, which are capable of scattering the residual excitons to yield a reduced diffusion coefficient.
View Article and Find Full Text PDFOpt Express
February 2025
Micro-nano lasers are highly desirable in intergrated optoelectronic devices for their compact size, efficient energy conversion, and rapid modulation speed. In this work, GaN/CsPbBr hybrid microcavities are realized by growing square CsPbBr microplate on a substrate of floating GaN microdisk. The growth conditions can be used to control the size of square CsPbBr microplates.
View Article and Find Full Text PDFACS Nano
July 2025
National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
The band gap energy of lead mixed bromide-iodide perovskite can be simply tuned by adjusting the ratio between the composing halide anions, which would be segregated again upon continuous light illumination to form the iodide-rich domains. Here, we have employed transient absorption microscopy to investigate the carrier diffusion dynamics in an individual CsPbBrI microplate under the influence of such iodide-rich domains. As expected in the phase-segregated microplate, the lifetime of charge carriers is shortened owing to their migration into the iodide-rich domains with a low band gap energy.
View Article and Find Full Text PDFJ Phys Chem Lett
December 2024
State Key Laboratory of Superhard Materials & College of Physics, Jilin University, Changchun 130012, China.
This study aims to achieve an ultralow lasing threshold in CsPbBr microplates (MPs), a crucial step toward developing electrically driven micro/nanolasers for optics integrated chips. We investigate the lasing behavior of CsPbBr MPs under varying pressures by using static-state photoluminescence (PL), time-resolved PL (TRPL), and first-principles theory calculations based on density functional theory (DFT). Our results reveal that the lasing threshold initially decreases and then increases, with a critical turning point at 0.
View Article and Find Full Text PDFNanomaterials (Basel)
July 2024
Department of Semiconductor Physics & Engineering and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 44610, Republic of Korea.