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The coming of the big-data era brought a need for power-efficient computing that cannot be realized in the Von Neumann architecture. Neuromorphic computing which is motivated by the human brain can greatly reduce power consumption through matrix multiplication, and a device that mimics a human synapse plays an important role. However, many synaptic devices suffer from limited linearity and symmetry without using incremental step pulse programming (ISPP). In this work, we demonstrated a charge-trap flash (CTF)-based synaptic transistor using trap-level engineered AlO/TaO/AlO gate stack for successful neuromorphic computing. This novel gate stack provided precise control of the conductance with more than 6 bits. We chose the appropriate bias for highly linear and symmetric modulation of conductance and realized it with very short (25 ns) identical pulses at low voltage, resulting in low power consumption and high reliability. Finally, we achieved high learning accuracy in the training of 60000 MNIST images.
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http://dx.doi.org/10.1021/acs.nanolett.2c03453 | DOI Listing |
Patterns (N Y)
July 2025
Department for Physics and Astronomy, Kirchhoff Institute for Physics, Heidelberg University, Baden-Württemberg, 69120 Heidelberg, Germany.
Multisensory perception produces vast amounts of data requiring efficient processing. This paper focuses on the multisensory example of touch in biological and artificial systems. We integrate philosophical theories of multisensory perception with neuromorphic hardware and demonstrate how classical sensory integration concepts can enhance artificial sensory systems.
View Article and Find Full Text PDFNat Commun
September 2025
Department of Physiology, University of Bern, Bern, Switzerland.
Spiking neural networks (SNNs) inherently rely on the timing of signals for representing and processing information. Augmenting SNNs with trainable transmission delays, alongside synaptic weights, has recently shown to increase their accuracy and parameter efficiency. However, existing training methods to optimize such networks rely on discrete time, approximate gradients, and full access to internal variables such as membrane potentials.
View Article and Find Full Text PDFJ Phys Chem Lett
September 2025
Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
Achieving UVA/B-selective, skin-inspired nociceptors with perception and blockade functions at the single-unit device level remains challenging. This is because the device necessitates distinct components for every performance metric, thereby leading to complex preparation processes and restricted performance, as well as the absence of deep UV (UVB and below)-selective semiconductors. Here, to address this, we develop a structure-simplification skin-inspired nociceptor using a reverse type-II CuAgSbI/MoS heterostructure.
View Article and Find Full Text PDFMater Horiz
September 2025
Faculty of Science, School of Chemistry and Physics, Queensland University of Technology (QUT), Brisbane, QLD 4000, Australia.
Organic electrochemical transistors (OECTs) continue to be the subject of much detailed and systematic study, being suitable for a diverse range of applications including bioelectronics, sensors, and neuromorphic computing. OECTs conventionally use a liquid electrolyte, and this architecture is well suited for sensing or bio-interfacing applications where biofluids or liquid samples can be used directly as the electrolyte. A more recent trend is solid-state OECTs, where a solid or semi-solid electrolyte such as an ion gel, hydrogel or polyelectrolyte replaces the liquid component for an all-solid-state device.
View Article and Find Full Text PDFJ Colloid Interface Sci
September 2025
School of Electronic Information & Artificial Intelligence, Shaanxi University of Science and Technology, Xi'an 710021, China.
The integration of information memory and computing enabled by nonvolatile memristive device has been widely acknowledged as a critical solution to circumvent the von Neumann architecture limitations. Herein, the Au/NiO/CaBiTiO/FTO (CBTi/NiO) heterojunction based memristor with varying film thicknesses are demonstrated on FTO/glass substrates, and the CBTi/NiO-4 sample shows the optimal memristor characteristics with 5 × 10 stable switching cycles and 10-s resistance state retention. The electrical conduction in the low-resistance state is dominated by Ohmic behavior, while the high-resistance state exhibited characteristics consistent with the space-charge-limited conduction (SCLC) model.
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