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Article Abstract
Photoelectric detectors based on binary transition metal chalcogenides have attracted widespread attention in recent years. However, due to the high-temperature synthesis of binary TMD, high-density deep-level defect states may be generated, leading to poor responsiveness or a long response time. Besides, the addition of an alloy will change the DLDSs from deep to shallow energy levels caused by S vacancies. In this paper, MoSSe nanostructures were synthesized by a hydrothermal method, and a novel type of photodetector was fabricated by using the synthesized material as a light sensitive material. The MoSSe-based photodetector not only has a high photocurrent, but also exhibits a wide spectral response in the range of 405 nm to 808 nm. At the same time, it can achieve a responsivity of 1.753 mA W under 660 nm laser irradiation of 1.75 mW mm. Therefore, this work can be considered as a method of constructing a new type of photodetector with a simple process and low cost.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9418964 | PMC |
| http://dx.doi.org/10.1039/d0na00202j | DOI Listing |
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