Severity: Warning
Message: file_get_contents(https://...@gmail.com&api_key=61f08fa0b96a73de8c900d749fcb997acc09&a=1): Failed to open stream: HTTP request failed! HTTP/1.1 429 Too Many Requests
Filename: helpers/my_audit_helper.php
Line Number: 197
Backtrace:
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 197
Function: file_get_contents
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 271
Function: simplexml_load_file_from_url
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 3165
Function: getPubMedXML
File: /var/www/html/application/controllers/Detail.php
Line: 597
Function: pubMedSearch_Global
File: /var/www/html/application/controllers/Detail.php
Line: 511
Function: pubMedGetRelatedKeyword
File: /var/www/html/index.php
Line: 317
Function: require_once
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In the past years, metal halide perovskite (MHP) single crystals have become promising candidates for optoelectronic devices since they possess better optical and charge transport properties than their polycrystalline counterparts. Despite these advantages, traditional bulk growth methods do not lend MHP single crystals to device integration as readily as their polycrystalline analogues. Perovskite nanocrystals (NCs), nanometer-scale perovskite single crystals capped with surfactant molecules and dispersed in non-polar solution, are widely investigated in solar cells and light-emitting diodes (LEDs), because of the direct bandgap, tunable bandgaps, long charge diffusion length, and high carrier mobility, as well as solution-processed film fabrication and convenient substrate integration. In this review, we summarize recent developments in the optoelectronic application of perovskite nanocrystal, including solar cells, LEDs, and lasers. We highlight strategies for optimizing the device performance. This review aims to guide the future design of perovskite nanocrystals for various optoelectronic applications.
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Source |
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8766301 | PMC |
http://dx.doi.org/10.3389/fchem.2021.822106 | DOI Listing |