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Stacking mismatches in hexagonal boron nitride (h-BN) nanostructures affect their photonic, mechanical, and thermal properties. To access information about the stacked configuration of layered ensembles, highly sophisticated techniques like X-ray photoemission spectroscopy or electron microscopy are necessary. Here, instead, by taking advantage of the geometrical and chemical nature of h-BN, we show how simple structural models, based on shortened interplanar distances, can produce effective charge densities. Accounting these in the non-analytical part of the lattice dynamical description makes it possible to access information about the composition of differently stacked variants in experimental samples characterized by infrared spectroscopy. The results are obtained by density functional theory and confirmed by various functionals and pseudopotential approximations. Even though the method is shown using h-BN, the conclusions are more general and show how effective dielectric models can be considered as valuable theoretical pathways for the vibrational structure of any layered material.
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http://dx.doi.org/10.1039/d0cp06188c | DOI Listing |
J Phys Condens Matter
September 2025
Department of Physics, Tuskegee University, 1200 West Montgomery Road, 106 Chappie James, Tuskegee, Alabama, 36088-1920, UNITED STATES.
Spin qubit defects in two-dimensional materials have a number of advantages over those in three-dimensional hosts including simpler technologies for the defect creation and control, as well as qubit accessibility. In this work, we select the VBCB defect in the hexagonal boron nitride (hBN) as a possible optically controllable spin qubit and explain its triplet ground state and neutrality. In this defect a boron vacancy is combined with a carbon dopant substituting the closest boron atom to the vacancy.
View Article and Find Full Text PDFNano Lett
September 2025
Center for 2D Quantum Heterostructures, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea.
Ultrathin amorphous materials are promising counterparts to 2D crystalline materials, yet their properties and functionalities remain poorly understood. Amorphous boron nitride (aBN) has attracted attention for its ultralow dielectric constant and superior manufacturability compared with hexagonal boron nitride. Here, we demonstrate wafer-scale growth of ultrathin aBN films with exceptional thickness and composition uniformity using capacitively coupled plasma-chemical vapor deposition (CCP-CVD) at 400 °C.
View Article and Find Full Text PDFInorg Chem
September 2025
Department of Chemistry and Biochemistry, University of South Carolina, Columbia, South Carolina 29208, United States.
A series of six quinary rare-earth sulfides CeEuNaSiS, CeEuKSiS, CeEuRbSiS, CeEuCsSiS, CeEuAgSiS, and CeEuCuSiS were obtained in an alkali iodide flux using the boron-chalcogen mixture (BCM) method. Single crystal X-ray diffraction was used to determine the structures of the high quality single crystals that were grown; their elemental compositions were confirmed by energy-dispersive spectroscopy (EDS). The compounds crystallize in the hexagonal crystal system in the noncentrosymmetric space group 6.
View Article and Find Full Text PDFNat Protoc
September 2025
Department of Physics, Technical University of Denmark, Kongens Lyngby, Denmark.
Scanning probe microscopy (SPM) is a powerful technique for mapping nanoscale surface properties through tip-sample interactions. Thermal scanning-probe lithography (tSPL) is an advanced SPM variant that uses a silicon tip on a heated cantilever to sculpt and measure the topography of polymer films with nanometer precision. The surfaces produced by tSPL-smooth topographic landscapes-allow mathematically defined contours to be fabricated on the nanoscale, enabling sophisticated functionalities for photonic, electronic, chemical and biological technologies.
View Article and Find Full Text PDFNano Lett
September 2025
Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States.
Here, we present an all-electrical readout mechanism for quasi-0D quantum states (0D-QS), such as point defects, adatoms, and molecules, that is modular and general, providing an approach that is amenable to scaling and integration with other solid-state quantum technologies. Our approach relies on the creation of high-quality tunnel junctions via the mechanical exfoliation and stacking of multilayer graphene (MLG) and hexagonal boron nitride (hBN) to encapsulate the target system in an MLG/hBN/0D-QS/hBN/MLG heterostructure. This structure allows for all-electronic spectroscopy and readout of candidate systems through a combination of coulomb and spin-blockade.
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