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Organometallic halide perovskites attract strong interests for their high photoresponsivity and solar cell efficiency. However, there was no systematic study of their power- and frequency-dependent photoresponsivity. We identified two different power-dependent photoresponse types in methylammonium lead iodide perovskite (MAPbI) photodetectors. In the first type, the photoresponse remains constant from 5 Hz to 800 MHz. In the second type, absorption of a single photon can generate a persistent photoconductivity of 30 pA under an applied electric field of 2.5 × 10 V/cm. Additional absorbed photons, up to 8, linearly increase the persistent photoconductivity, which saturates with the absorption of more than 10 photons. This is different than single-photon avalanche detectors (SPADs) because the single-photon response is persistent as long as the device is under bias, providing unique opportunities for novel electronic and photonic devices such as analogue memories for neuromorphic computing. We propose an avalanche-like process for iodine ions and estimate that absorption of a single 0.38 aJ photon triggers the motion of 10 ions, resulting in accumulations of ions and charged vacancies at the MAPbI/electrode interfaces to cause the band bending and change of electric material properties. We have made the first observation that single-digit photon absorption can alter the macroscopic electric and optoelectronic properties of a perovskite thin film.
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http://dx.doi.org/10.1021/acs.nanolett.0c00161 | DOI Listing |
ACS Appl Mater Interfaces
April 2025
Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Republic of Korea.
Capacitors, renowned for their high power and energy density attributed to their rapid discharge capabilities, hold significant promise as energy storage devices. While capacitors with various junctions have been the subject of extensive research, there remains a significant knowledge gap concerning the fundamental photoelectron dynamics within metal-semiconductor (MS) junction capacitance, which is crucial for the development of photodevices. Here, we demonstrate the effects of localized surface plasmon resonance (LSPR) on the capacitance behavior of Au/TiO Schottky diodes, one of the MS junction diode systems.
View Article and Find Full Text PDFNanomaterials (Basel)
April 2024
Department of Electronic Engineering, Chienkuo Technology University, Changhua 500020, Taiwan.
In this study, the photoelectric properties of a complete series of GaSSe (0 ≤ ≤ 1) layered crystals are investigated. The photoconductivity spectra indicate a decreasing bandgap of GaSSe as the Se composition increases. Time-resolved photocurrent measurements reveal a significant improvement in the response of GaSSe to light with increasing .
View Article and Find Full Text PDFSensors (Basel)
May 2023
Department of Materials Science and Engineering, National Chung Hsing University, No. 145, Xingda Rd., South Dist., Taichung 402, Taiwan.
The SnS/SnS heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process.
View Article and Find Full Text PDFAdv Sci (Weinh)
July 2023
State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China.
Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results in the sublinear power-dependent photoresponse and lower optoelectronic efficiency. The desirable superlinear photocurrent is mostly achieved by sophisticated 2D heterostructures or device arrays, while 2D materials rarely show intrinsic superlinear photoresponse.
View Article and Find Full Text PDFNanomaterials (Basel)
January 2023
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China.
The photo-induced superconducting phase transition is widely used in probing the physical properties of correlated electronic systems and to realize broadband photodetection with extremely high responsivity. However, such photoresponse is usually insensitive to electrostatic doping due to the high carrier density of the superconductor, restricting its applications in tunable optoelectronic devices. In this work, we demonstrate the gate voltage modulation to the photoresponsivity in a two-dimensional NbSe-graphene heterojunction.
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