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Pseudobinary phases (SnSe) BiSe exhibit a very diverse structural chemistry characterized by different building blocks, all of which are cutouts of the NaCl type. For SnSe contents between x = 5 and x = 0.5, several new phases were discovered. Next to, for example, SnBiSe ( x = 4) in the NaCl structure type and SnBiSe ( x = 0.5) in the layered defect GeSbTe structure type, there are at least four compounds (0.8 ≤ x ≤ 3) with lillianite-like structures built up from distorted NaCl-type slabs (L4,4-type SnBiSe, L4,5-type SnBiSe, L4,7-type SnBiSe, and L7,7-type SnBiSe). For two of them (L4,7 and L7,7), the cation distributions were determined by resonant X-ray scattering, which also confirmed the presence of significant amounts of cation vacancies. Thermoelectric figures of merit ZT range from 0.04 for SnBiSe to 0.2 for layered SnBiSe; this is similar to that of the related compounds SnBiTe or PbBiTe. Compounds of the lillianite series exhibit rather low thermal conductivities (∼0.75 W/mK for maximal ZT). More than other "sulfosalts", compounds in the pseudobinary system SnSe-BiSe adapt to changes in the cation-anion ratio by copying structure types of compounds containing lighter or heavier homologues of Sn, Bi, or Se and can incorporate significant amounts of vacancies. Thus, (SnSe) BiSe is a multipurpose model system with vast possibilities for substitutional and structural modification aiming at the optimization of thermoelectric or other properties.
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http://dx.doi.org/10.1021/acs.inorgchem.8b00105 | DOI Listing |
Phys Rev Lett
May 2025
Bhabha Atomic Research Centre, HP&SRPD, Trombay, Mumbai 400085, India.
We report a remarkable enhancement of superconductivity near the Anderson metal-insulator transition in the three-dimensional (3D) BCS-superconductor bismuth selenide (BiSe). The SnSe-type orthorhombic BiSe is successfully stabilized upon decompression after this phase is formed at high pressure from the two-dimensional layered BiSe phase and the intrinsic disorder concomitantly approaches the localization threshold near ambient pressure. A dramatic enhancement of the superconducting transition temperature near the localization transition is associated with the sharp increase in the local density of states and significant increase in the background dielectric constant, hence providing a short-ranged Coulomb interaction.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2020
Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, P. R. China.
GeSe was theoretically predicted to have thermoelectric (TE) performance as high as SnSe. However, the relatively high TE performance was not achieved experimentally in doped GeSe samples with an original orthorhombic structure but observed in Ag(Sb,Bi)(Se,Te) alloyed samples that crystalize in either a rhombohedral or cubic structure. Herein, to clarify the crystal structure-dependent properties, the electrical and thermal transport properties of GeSeTe (0 ≤ ≤ 0.
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