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Directional photofluidization of azobenzene materials has provided unprecedented opportunities for the structural reconfiguration of circular holes, line gaps, ellipsoidal holes, and nanofunnel-shaped micro/nanoarchitectures. However, all the reconfigured structures have a parabolic or round wall due to the tendency of the photofluidized azobenezene materials to minimize the surface area, which limits their use as a reconfigurable etch-mask for the lithography process. In this work, a simple method is presented that can change the round walls of azopolymer architectures into rectangular walls, which is named rectangularization. By irradiating far-field light on reconfigured azopolymer in a conformal contact with a flat polydimethylsiloxane (PDMS) film, the round wall transforms to a rectangular one because the azopolymer adheres along the PDMS surface while being photofluidized. As a result, the rectangularization process creates a variety of structural features and sizes ranging from a few micrometers to 150 nm having a rectangular wall. By exploiting the rectangularization process, the concept of a photo-reconfigurable etch mask is achieved, which transfers the mask patterns to a silicon pattern with a high structural fidelity and imparts a considerable flexibility to the lithography process.
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http://dx.doi.org/10.1002/smll.201703250 | DOI Listing |
Sci Technol Adv Mater
September 2025
Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan.
The planar and lateral HCl-gas etching behavior of (001) β-GaO under oxygen supply were investigated at partial pressures of (O) = 0-2.5 kPa and 645-1038°C, while maintaining a constant HCl supply partial pressure of (HCl) at 63 Pa. At 747°C, the planar etch rate (PER) exhibited a slight decrease with increasing (O).
View Article and Find Full Text PDFNanotechnology
August 2025
Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea.
Extreme ultraviolet lithography is used to mass-produce nanoscale integrated circuits, and high-numerical-aperture systems for 3 nm technology nodes are currently being developed. However, conventional tantalum-based EUV masks face limitations in terms of resolving fine patterns. This study introduces platinum-tungsten alloys as alternative absorber materials that are advantageous from both imaging performance and manufacturability perspectives.
View Article and Find Full Text PDFSci Rep
July 2025
School of Mechanical Engineering, Yangzhou University, Yangzhou, 225009, China.
In this study, the inductively coupled plasma (ICP) etching process for patterning single-crystal diamond was experimentally investigated using O₂/Ar as the etching gas. The influence of various etching parameters on the process was analyzed via laser confocal microscopy. Taking etching rate and surface roughness as the primary evaluation metrics, the optimal etching parameters were determined as follows: an O₂/Ar gas flow ratio of 50/50 sccm, an ICP power of 600 W, a bias (RF) power of 120 W, and a chamber pressure of 20 mTorr.
View Article and Find Full Text PDFACS Appl Mater Interfaces
July 2025
Institute for Photonics and Optical Sciences (IPOS), School of Physics, The University of Sydney, Camperdown, NSW 2006, Australia.
Deterministic and versatile approaches to sample preparation on nanoscopic scales are important in many fields including photonics, electronics, biology and material science. However, challenges exist in meeting many nanostructuring demands─particularly in emerging optical materials and component architectures. Here, we report a nanofabrication workflow that overcomes long-standing challenges in deterministic and top down sample preparation procedures.
View Article and Find Full Text PDFACS Appl Mater Interfaces
May 2025
Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073, P. R. China.
Fluorinated graphene (FG), a two-dimensional graphene derivative, has attracted wide attention due to its extraordinary physical and chemical properties, as well as its underlying applications. The treatment of xenon difluoride (XeF) has proved to be an effective way to achieve FG with different stoichiometric F/C ratios without graphene being etched. Here we compare the fluorination of mechanically exfoliated graphene by a home-built XeF fluorination system and a commercial Orbis XeF etching system.
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