The structure and opto-thermo electronic properties of a new (Bi(BiS)I) hexagonal nano-/micro-rod.

The semiconductor optoelectronic properties of an inorganic (Bi(BiS)I) hexagonal nano-/micro-rod are firstly explored herein. Transmittance and thermoreflectance measurements show that (Bi(BiS)I) hexagonal rods possess an indirect gap of 0.73 eV and a direct gap of 1.08 eV, respectively. Hot-probe measurements of (Bi(BiS)I) reveal the p-type semiconductor behavior and high thermoelectric voltage. Polarized Raman measurements of the m-plane (Bi(BiS)I) (along c and perpendicular to the c axis) identify the structural anisotropy of the hexagonal nano-/micro-rod.