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Article Abstract
Ultralarge topological crystalline insulator Pb1-x Snx Te nanoplates are developed by controlling substrate surface chemical properties in a cost-efficient chemical vapor deposition (CVD) process. Dominant topological surface transport is demonstrated by a gate-voltage-controlled weak (anti)localization effect, indicating the potential application of these nanoplates to low-dissipation topological transistors.
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| http://dx.doi.org/10.1002/adma.201504630 | DOI Listing |
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