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The coupling of the localized surface plasmon resonance of Au nanoparticles is utilized to deliver a visible-light stimulus to control conduction at the LaAlO3 /SrTiO3 interface. A giant photoresponse and the controllable metal-insulator transition are characterized at this heterointerface. This study paves a new route to optical control of the functionality at the heterointerfaces.
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http://dx.doi.org/10.1002/adma.201503499 | DOI Listing |
J Phys Condens Matter
September 2025
Physics and Applied Mathematics Unit, Indian Statistical Institute, 203 Barrackpore Trunk Road, Kolkata-700108, Kolkata, Kolkata, West Bengal, 700108, INDIA.
Quasiperiodic systems are known to exhibit localization transitions in low dimensions, wherein all electronic states become localized beyond a critical disorder strength. Interestingly, recent studies have uncovered a reentrant localization (RL) phenomenon: upon further increasing the quasiperiodic modulation strength beyond the localization threshold, a subset of previously localized states can become delocalized again within a specific parameter window. While RL transitions have been primarily explored in systems with simple periodic modulations, such as dimerized or long-range hopping integrals, the impact of more intricate or correlated hopping structures on RL behavior remains largely elusive.
View Article and Find Full Text PDFOpt Express
February 2025
Serving as cavity quantum electrodynamic testbeds at the nanoscale, the past decade has seen a prosperous rise in strong coupling between metallic nanostructures and semiconductor excitons. Within the iteration of the delicate plasmonic nanostructures, metal-insulator-metal (e.g.
View Article and Find Full Text PDFNano Lett
August 2025
Hefei National Research Center for Physical Sciences at Microscale and School of Emergent Technology, University of Science and Technology of China, Hefei 230026, China.
Epitaxial growth serves as a critical platform for tailoring electronic interactions. Here, we synthesized high-quality NdSrNiO thin films on (LaSr)(AlTa)O (LSAT) (001) and SrTiO (STO) (001) substrates and systematically investigated the effects of substrate strain and chemical doping on their low-energy electronic structures using angle-resolved photoemission spectroscopy (ARPES). Transport measurements reveal that Sr doping strongly suppresses the metal-insulator transition (MIT) temperature on both substrates, with accelerated suppression in STO (001)-grown samples.
View Article and Find Full Text PDFACS Nano
August 2025
Sandia National Laboratories, 7011 East Avenue, Livermore, California 94550, United States of America.
The insertion of electron-donating ions has emerged as a powerful technique to manipulate the electronic structure of correlated oxides. However, the resulting electronic structure remains poorly understood, with challenges in quantifying dopant concentration, unexplained differences with substitutionally doped films, and a poor understanding of how dopant atoms interact with insulator-metal transitions (IMTs). Here, these issues are addressed in the context of the rare earth nickelates, a prototypical correlated oxide family with widely tunable electronic behavior under the insertion of protons and alkali metals as interstitial dopants.
View Article and Find Full Text PDFNano Lett
August 2025
Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
Two-dimensional (2D) materials provide unique opportunities to realize emergent phenomena by reducing their dimensionality. Using scanning tunneling microscopy combined with first-principles calculations, we determine an intriguing case of a metal-insulator transition (MIT) in a bulk compound, (TBA)VSe. Atomic-scale imaging reveals that the initial 4a × 4a charge density wave (CDW) order in 1T-VSe transforms to √7a × √3a ordering upon intercalation, which is associated with an insulating gap with a magnitude of up to approximately 115 meV.
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