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Maskless inverted pyramid texturization of silicon. | LitMetric

Maskless inverted pyramid texturization of silicon.

Sci Rep

Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.

Published: June 2015


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Article Abstract

We discovered a technical solution of such outstanding importance that it can trigger new approaches in silicon wet etching processing and, in particular, photovoltaic cell manufacturing. The so called inverted pyramid arrays, outperforming conventional pyramid textures and black silicon because of their superior light-trapping and structure characteristics, can currently only be achieved using more complex techniques involving lithography, laser processing, etc. Importantly, our data demonstrate a feasibility of inverted pyramidal texturization of silicon by maskless Cu-nanoparticles assisted etching in Cu(NO3)2 / HF / H2O2 / H2O solutions and as such may have significant impacts on communities of fellow researchers and industrialists.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4451685PMC
http://dx.doi.org/10.1038/srep10843DOI Listing

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