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Extreme ultraviolet (EUV) fluorescence emitted from Ar clusters irradiated by intense EUV free electron laser (FEL) pulses has been investigated. The EUV fluorescence spectra display rich structure at wavelengths shorter than the incident FEL wavelength of 51 nm. The results suggest that multiply-charged ions are produced following the ion-electron recombination processes which occur in the nanoplasma created by multi-photon excitation during the intense EUV-FEL pulses.
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http://dx.doi.org/10.1364/OE.20.023174 | DOI Listing |
Recent advances in 2 μm laser technology demonstrate significant potential to replace conventional 10.6 μm lasers for generating efficient extreme ultraviolet (EUV) light sources. The multi-pulse extraction (MPE) technique, synergized with gain media exhibiting long fluorescence lifetimes (e.
View Article and Find Full Text PDFChimia (Aarau)
February 2025
Laboratory for Synchrotron Radiation and Femtochemistry, Center for Photon Science, Paul Scherrer Institut (PSI), CH-5232 Villigen, Switzerland.
We present α-Al2O3 XAS, XES and RIXS measurements across the Al L2/L3 edges at about 79 eV excitation energy. In the emission spectra, we identify two fluorescence peaks, corresponding to electronic transitions into the 2p core hole from mixed states of Al 3s and Al 3d character, both mixed with O 2p orbitals. Even if the XAS spectrum shows more than one resonance, surprisingly only one clear RIXS signal with energy loss equal to 10.
View Article and Find Full Text PDFPlant Physiol Biochem
May 2025
Department of Botany, MMV, Banaras Hindu University, Varanasi, 221005, India. Electronic address:
Ultraviolet-B (UV-B) radiation is a potent stressor showing functional duality in plants. The escalating impact of climate change and UV-B radiation trigger a series of stress acclimation responses in plants, which are initiated through UVR8 signaling and result in accumulation of secondary metabolites. The impact of UV-B on major cereal crops has been explored, but its impact on pearl millet has not been investigated, specifically secondary metabolites linked with beneficial bioactive compounds.
View Article and Find Full Text PDFRSC Adv
January 2025
Institute of Atomic and Molecular Sciences, Academia Sinica Taipei 106 Taiwan
Extreme ultraviolet (EUV) lithography is a cutting-edge technology in contemporary semiconductor chip manufacturing. Monitoring the EUV beam profiles is critical to ensuring consistent quality and precision in the manufacturing process. This study uncovers the practical use of fluorescent nanodiamonds (FNDs) coated on optical image sensors for profiling EUV and soft X-ray (SXR) radiation beams.
View Article and Find Full Text PDFNano Lett
November 2023
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei City 106319, Taiwan.
Extreme ultraviolet (EUV) radiation with wavelengths of 10-121 nm has drawn considerable attention recently for its use in photolithography to fabricate nanoelectronic chips. This study demonstrates, for the first time, fluorescent nanodiamonds (FNDs) with nitrogen-vacancy (NV) centers as scintillators to image and characterize EUV radiations. The FNDs employed are ∼100 nm in size; they form a uniform and stable thin film on an indium-tin-oxide-coated slide by electrospray deposition.
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