Enhancement of photoresponse for InGaAs infrared photodetectors using plasmonic WO3-x/CsWO3-xnanocrystals.

Fast and accurate detection of light in the near-infrared (NIR) spectral range plays a crucial role in modern society, from alleviating speed and capacity bottlenecks in optical communications to enhancing the control and safety of autonomous vehicles through NIR imaging systems. Several technological platforms are currently under investigation to improve NIR photodetection, aiming to surpass the performance of established III-V semiconductor p-i-n (PIN) junction technology. These platforms include-grown inorganic nanocrystals (NCs) and nanowire arrays, as well as hybrid organic-inorganic materials such as graphene-perovskite heterostructures.