O-band membrane photodetector with InGaAsP-bulk absorption core using Franz-Keldysh effect.

There has been an increasing need for small, low-cost, and low-power consumption optical transceivers for short-reach fiber links. Waveguide-integrated photodetectors (PDs) with wide bandwidth and high responsivity on Si photonics platforms are an essential element for these applications. We have fabricated an O-band membrane PD which is suitable for integration with high-performance III-V-based membrane devices such as lasers and modulators, and passive waveguide circuits on the Si photonics platforms.

16 × 112 Gbps directly modulated membrane laser array for co-packaged interconnects.

A low-cost and low-power-consumption optical transmitter with a narrow shoreline is crucial for short-reach optical communication. To increase the shoreline bandwidth density (Gbps/mm) at low cost, multiple optical components, including lasers, should be integrated on a single chip. In this study, we develop a sixteen-channel membrane laser array integrated with silica-based spot-size convertors on a SiO/Si substrate, with a footprint of 1.

Optical links on silicon photonic chips using ultralow-power consumption photonic-crystal lasers.

Ultrashort-distance optical interconnects are becoming increasingly important due to continuous improvements in servers and high-performance computers. As light sources in such interconnects, directly modulated semiconductor lasers with an ultrasmall active region are promising. In addition, using Si waveguides is important to provide low loss optical links with functions such as wavelength filtering and switching.

Integration of a high-efficiency Mach-Zehnder modulator with a DFB laser using membrane InP-based devices on a Si photonics platform.

We demonstrate a wafer-level integration of a distributed feedback laser diode (DFB LD) and high-efficiency Mach-Zehnder modulator (MZM) using InGaAsP phase shifters on Si waveguide circuits. The key to integrating materials with different bandgaps is to combine direct wafer bonding of a multiple quantum well layer for the DFB LD and regrowth of a bulk layer for the phase shifter. Buried regrowth of an InP layer is also employed to define the waveguide cores for the LD and phase shifters on a Si substrate.