Structural, optical, and magnetic properties of Ag, Mn and Ar ions implanted ZnO thin films: effect of implantation dose and stopping energy.

Herein, we systematically studied the effect of various excitation processes on the structural, optical, and magnetic properties of ZnO films implanted with 80 keV Ar, 110 keV Mn, and 190 keV Ag ions. Four different doses of 1 × 10, 1 × 10, 1 × 10, and 2 × 10 ions per cm were used for implantation. It was observed that the structural, optical, and magnetic properties of the implanted samples were dominantly affected at the highest dose of 2 × 10 ions per cm.

MgO Thin Film Growth on Si(001) by Radio-Frequency Sputtering Method.

Herein, sputtering duration and annealing temperature effects on the structure and local electronic structure of MgO thin films were studied using synchrotron radiation based X-ray diffraction and X-ray absorption spectroscopic investigations. These films were grown at substrate temperature of 350 °C by varying sputtering duration from 25 min to 324 min in radio frequency (RF) sputtering method followed by post-deposition annealing at 400, 600 and 700 °C for 3 h. These films were amorphous upto certain sputtering durations, typically upto 144 min and attains crystallization thereafter.

Correlating the size and cation inversion factor in context of magnetic and optical behavior of CoFeO nanoparticles.

Herein, the size dependent behavior of cobalt ferrite nanoparticles was investigated using synchrotron radiation based techniques. Scanning electron micrographs revealed the enhancement of particle/crystallite size with increase of annealing temperature. Moreover, the shape of these particles also changed with increase of crystallite size.

Microstructure, local electronic structure and optical behaviour of zinc ferrite thin films on glass substrate.

Zinc ferrite thin films were deposited using a radio-frequency-sputtering method on glass substrates. As-deposited films were annealed at 200°C for 1, 3 and 5 h, respectively. X-ray diffraction studies revealed the amorphous nature of as-grown and annealed films.

Low-temperature wafer-scale synthesis of two-dimensional SnS.

Research on two-dimensional (2D) metal dichalcogenides is rapidly expanding owing to their unique characteristics that do not exist in bulk materials. The industrially compatible development of these emerging materials is indispensable to facilitate the transition of 2D metal dichalcogenides from the research stage to the practical industrial application stage. However, an industrially relevant method, i.

Mechanistic insights on the electronic properties and electronic/atomic structure aspects in orthorhombic SrVO thin films: XANES-EXAFS study.

Correlations among the B-O6 octahedra distortions, existing polymorphous phases, band structures and electronic conductivities of ABO perovskites are matters for debate and require a deep understanding of their local atomic/electronic structures and diverse assets. In this study, to illustrate the distortion in V-O6 octahedra and its implication on the band structure and electronic properties, spectroscopic investigations on the RF-sputtering grown insulating SrVO thin films were employed using X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS). V K-edge and V L-edge XANES, along with atomic multiplet calculations, have confirmed the 4+ oxidation state of V ions in the pristine and annealed SrVO thin films.