Efficient n- and p-Type Molecular Dopings in Large-Scale Monolayer Dichalcogenides for High-Performance Field-Effect Transistors.

Doping engineering has been actively investigated for two-dimensional (2D) transition metal dichalcogenides (TMDs) to enhance their electrical behavior, particularly for use in field-effect transistors (FETs). Here, we propose unprecedented redox-active n-type and p-type dopants, naphthalene and WCl, respectively, for large-scale monolayer MoS films synthesized via low-pressure chemical vapor deposition using a NaS promoter. These molecular dopants were selected based on their high redox potentials versus the reference ferrocene, which facilitated the ionization of the dopants via charge transfer.

Oxygen-Doped 2D InSe Nanosheets with Extended In-Plane Lattice Strain for Highly Efficient Piezoelectric Energy Harvesting.

With the emergence of electromechanical devices, considerable efforts have been devoted to improving the piezoelectricity of 2D materials. Herein, an anion-doping approach is proposed as an effective way to enhance the piezoelectricity of α-InSe nanosheets, which has a rare asymmetric structure in both the in-plane and out-of-plane directions. As the O plasma treatment gradually substitutes selenium with oxygen, it changes the crystal structure, creating a larger lattice distortion and, thus, an extended dipole moment.

Improved Photoresponse Characteristics of a ZnO-Based UV Photodetector by the Formation of an Amorphous SnO Shell Layer.

Although ZnO nanostructure-based photodetectors feature a well-established system, they still present difficulties when being used in practical situations due to their slow response time. In this study, we report on how forming an amorphous SnO (a-SnO) shell layer on ZnO nanorods (NRs) enhances the photoresponse speed of a ZnO-based UV photodetector (UV PD). Our suggested UV PD, consisting of a ZnO/a-SnO NRs core-shell structure, shows a rise time that is 26 times faster than a UV PD with bare ZnO NRs under 365 nm UV irradiation.