Publications by authors named "Taegyu Kwon"
Correction: HfO-based ferroelectric synaptic devices: challenges and engineering solutions.
Chem Commun (Camb)
March 2025
Correction for 'HfO-based ferroelectric synaptic devices: challenges and engineering solutions' by Taegyu Kwon , , 2025, , 3061-3080, https://doi.org/10.1039/d4cc05293e.
View Article and Find Full Text PDFHfO-based ferroelectric synaptic devices: challenges and engineering solutions.
Chem Commun (Camb)
February 2025
HfO-based ferroelectric memories have garnered significant attention for their potential to serve as artificial synaptic devices owing to their scalability and CMOS compatibility. This review examines the key material properties and challenges associated with HfO-based ferroelectric artificial synaptic devices as well as the recent advancements in engineering strategies to improve their synaptic performance. The fundamental physics and material properties of HfO-based ferroelectrics are reviewed to understand the theoretical origin of the aforementioned technical issues in ferroelectric HfO-based synaptic devices.
View Article and Find Full Text PDFArticle Synopsis
- * The device achieves a high on/off ratio of 1273 by changing the conduction process from thermal injection to Fowler-Nordheim tunneling due to the modulation of energy barriers.
- * It shows promise for applications in neuromorphic computing, maintaining a read margin of 10% in integrated arrays exceeding 7k, and demonstrates over 92% accuracy in image recognition while confirming reliable self-rectifying behavior.