Enhancing electronic and optoelectronic performances of tungsten diselenide by plasma treatment.

Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. In this work, we develop an effective approach to enhance the electronic and optoelectronic performances of WSe2-based devices by N2O plasma treatment. The hole mobility and sheet density increase by 2 and 5 orders of magnitude, reaching 110 cm2 V-1 s-1 and 2.

The effect of air stable n-doping through mild plasma on the mechanical property of WSe layers.

Two-dimensional transition metal dichalcogenides have been widely applied to electronic and optoelectronic device owing to their remarkable material properties. Many studies present the platform for regulating the contact resistance via various doping schemes. Here, we report the alteration of mechanical properties of few top layers of the WSe flake which are processed by air stable n-doping of NO with a constant gas flow through mild plasma and present better manufacturability and friability.