ACS Appl Mater Interfaces
April 2025
Although ultralow energy (ULE) ion implantation is an effective method for substitutional doping of graphene with transition metals, it generally results in substantial nonsubstitutional incorporation, such as atoms intercalated between the graphene layer and the substrate or incorporated in the substrate subsurface. These nonsubstitutional components can have undesired or uncontrolled effects on the electronic properties of the doped graphene layer. Here, we demonstrate that graphene, substitutionally doped with Mn via ULE ion implantation, can be successfully transferred using a standard wet transfer process.
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