Graphite-Based Localized Heating Technique for Growing Large Area Methylammonium Lead Bromide Single Crystalline Perovskite Wafers and Their Charge Transfer Characteristics.

Development of a reproducible technique to grow large area single crystalline perovskite wafers is an open research gap in the field of single crystalline perovskite solar cells. A graphite-based localized heating technique for growing large area methylammonium lead bromide (CHNHPbBr; MAPBr) single crystalline thin film (SCTF) on different buffer layers, such as glass/indium doped tin oxide (ITO), glass/ITO/poly(triaryl amine) (PTAA), and glancing angle deposition (GLAD) coated glass/ITO/TiO substrates is reported, and their charge transport properties are discussed. It is observed that the localized heating technique can confine the supersaturation of the precursor mainly to the center of the substrate, leading to a restricted number of nucleations within a specific area on the substrate.

Novel supramolecular luminescent metallogels containing Tb(iii) and Eu(iii) ions with benzene-1,3,5-tricarboxylic acid gelator: advancing semiconductor applications in microelectronic devices.

A novel strategy was employed to create supramolecular metallogels incorporating Tb(iii) and Eu(iii) ions using benzene-1,3,5-tricarboxylic acid (TA) as a gelator in ,-dimethylformamide (DMF). Rheological analysis demonstrated their mechanical robustness under varying stress levels and angular frequencies. FESEM imaging revealed a flake-like hierarchical network for Tb-TA and a rod-shaped architecture for Eu-TA.