Tetraoctylammonium Bromide Interlayer between NiLiO and Perovskite for Light-Emitting Diodes.

Physical vapor deposition is a favorable technique for fabricating light-emitting diodes (LEDs) due to its scalability and reproducibility. However, the performances of LEDs fabricated via this method are worse than those prepared via solution processing owing to the generation of high defect densities. In this study, we introduce a layer of tetraoctylammonium bromide (TOABr), an interfacial-modification compound containing four long octyl chains that are symmetrically arranged around an N atom, to reduce nonradiative recombination and trap densities in CsPbBr.

Growth and NO-Sensing Properties of Biaxial p-SnO/n-ZnO Heterostructured Nanowires.

Biaxial p-SnO/n-ZnO heterostructured nanowires (average length of 10 μm) were grown onto a glass substrate by thermal evaporation in vacuum. These nanowires had spherical ball tips, and the size of the SnO part increased gradually from the top to the bottom of the nanowire, but the corresponding size of ZnO varied slightly. The Sn-Zn alloy formed in the tips resulted in determined as the catalyst of the growth of the ZnO nanowires.