Publications by authors named "Nandu B Chaure"

The MoS nanobelts/Carbon hybrid nanostructure was synthesized by the simple hydrothermal method. The MoS nanobelts were distributed in the interlayers of Lemon grass-derived carbon (LG-C), provides the active sites and avoid restacking of the sheets. The structural and morphological characterization of MoS/LG-C and LG-C were performed by Raman spectroscopy, X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy.

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ZnO and ZnO:Al thin films have been successfully synthesized by simple solution processable method at low temperature. Highly crystalline (002) preferentially oriented, uniform, and smooth ZnO:Al thin films are produced. The electrical, J-V and C-V, measurements revealed higher current flow and more carrier concentration, respectively, for ZnO:Al samples compared with pristine ZnO.

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In this work, the topic of the detrimental contact effects in organic thin-film transistors (OTFTs) is revisited. In this case, contact effects are considered as a tool to enhance the characterization procedures of OTFTs, achieving more accurate values for the fundamental parameters of the transistor threshold voltage, carrier mobility and on-off current ratio. The contact region is also seen as a fundamental part of the device which is sensitive to physical, chemical and fabrication variables.

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Monodispersed and highly luminescence cadmium selenide (CdSe) quantum dots (QDs) have been prepared in a single pot by colloidal reaction method. The QDs were characterized using X-ray diffraction (XRD), Raman Spectroscopy, transmission electron microscope (TEM), energy dispersive spectroscopy (EDS), UV-visible absorption spectroscopy and photoluminescence (PL) spectroscopy to study the structural, morphological, compositional and optical properties. The growth temperature played an important role to control the particle size.

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Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10 cm V s and 10 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices.

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