Large Second Harmonic Generation of Inp/SiO Multilayer in Temperature Range of 80-673 K.

III-V compound semiconductors, represented by indium phosphide (InP), demonstrate great potential in the field of nonlinear optics (NLO) due to their high nonlinear susceptibility. However, achieving high second harmonic generation (SHG) efficiency and good atmospheric stability remains a critical challenge for InP-based NLO devices, limiting their practical applications. In this work, the vapor-liquid-solid (VLS) growth of InP/SiO multilayer is reported, which does not require strict epitaxially-grown conditions.

Strain-Reduced Inversion Symmetry in Ultrathin SnPSe Crystals for Giant Bulk Piezophotovoltaic Generation.

With the potential to surpass the Shockley-Queisser (S-Q) limitation for solar energy conversion, the bulk photovoltaic (BPV) effect, which is induced by the broken inversion symmetry of the lattice, presents prospects for future light-harvesting technologies. However, the development of BPV is largely limited by the low solar spectrum conversion efficiency of existing noncentrosymmetric materials with wide band gaps. This study reports that the strain-induced reduction of inversion symmetry can enhance the second-order nonlinear susceptibility (χ) of SnPSe crystals by an order of magnitude, which contributes to an extremely high value of 1.

Orientation-Related Giant Photothermoelectric Energy Conversion in Quasi-One-Dimensional van der Waals TaSe Crystals.

Featuring the capabilities of self-power, low dark current, and broadband response, photothermoelectric (PTE) detection demonstrates great potential for application in the military and civilian fields. The development of materials with an intrinsically high efficiency for PTE energy conversion and the in-depth study of its thermoelectric properties on the device performance are of great significance. Here, we reported a quasi-one-dimensional (quasi-1D) van der Waals (vdW) TaSe crystal as a promising material candidate for PTE detection.