Although the demand for intelligent implantable bioelectronics is steadily increasing, their progress is hindered by the limited availability of materials with sufficient biocompatibility for implantation. Herein, we propose a neuromorphic device with human brain-inspired biomimetic functionality utilizing naturally sourced mucin as the active layer material. The mucin-based neuromorphic memristor (MNM) array successfully mimics key synaptic behaviors uniformly, including a paired-pulse facilitation index of 122.
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January 2025
Optoelectronic devices require stable operation to detect repetitive visual information. In this study, endurable arrays based on heterojunction phototransistors composed of indium-gallium-zinc oxide (IGZO) with a low dark current and tin sulfide (SnS) capable of absorbing visible light are developed for image sensors. The tandem structure of IGZO/SnS/IGZO (ISI) enables stable operation under repetitive exposure to visible light by improving the transport ability of the photoexcited carriers through mitigated trap sites and their separation into each IGZO layer.
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August 2021
A homojunction-structured oxide phototransistor based on a mechano-chemically treated indium-gallium-zinc oxide (IGZO) absorption layer is reported. Through this novel and facile mechano-chemical treatment, mechanical removal of the cellophane adhesive tape induces reactive radicals and organic compounds on the sputtered IGZO film surface. Surface modification, following the mechano-chemical treatment, caused porous sites in the solution-processed IGZO film, which can give rise to a homojunction-porous IGZO (HPI) layer and generate sub-gap states from oxygen-related defects.
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