Combined feature of enhanced stability and multi-level switching observed in TiN/TaO/Ag-NPs/ITO/PET structure.

Both stability and multi-level switching are crucial performance aspects for resistive random-access memory (RRAM), each playing a significant role in improving overall device performance. In this study, we successfully integrate these two features into a single RRAM configuration by embedding Ag-nanoparticles (Ag-NPs) into the TiN/TaO/ITO structure. The device exhibits substantially lower switching voltages, a larger switching ratio, and multi-level switching phenomena compared to many other nanoparticle-embedded devices.

Combined feature of enhanced stability and multi-level switching observed in TiN/Ta2O5/Ag-NPs/ITO/PET structure.

Both stability and multi-level switching are crucial performance aspects for resistive random-access memory (RRAM), each playing a significant role in improving overall device performance. In this study, we successfully integrate these two features into a single RRAM configuration by embedding Ag-nanoparticles (Ag-NPs) into the TiN/Ta2O5/ITO structure. The device exhibits substantially lower switching voltages, a larger switching ratio, and multi-level switching phenomena compared to many other nanoparticle-embedded devices.

High performance and low power consumption resistive random access memory with Ag/FeO/Pt structure.

Due to magnetic field tunability and the abundance of iron in the Earth's crust, iron oxide-based resistive random access memory (RRAM) is considered to be low cost and potential for multi-level storage. However, the relatively high operation voltage (>1 V) and small storage window (<100) limit its application. In this work, the devices with simple Ag/FeO/Pt structure exhibit typical bipolar resistive switching with ultralow set voltage () of 0.