Improved Metal-Semiconductor Interface in Monolayer (1L)-MoS via Thermally-Driven Ag Filaments as Atomic Scale Edge Contacts Triggered by Selective Annealing Process Using Long Wavelength (1064 nm) Pulsed Laser.

Here, we explore the effectiveness of a pulsed laser annealing (PLA) process to trigger atomic scale edge contacts by Ag filaments in reducing the contact resistance of a MoS field-effect transistor (FET). Employing a long wavelength (1064 nm) pulsed laser, we anneal monolayer (1L)-MoS FETs with various metal electrodes, including Ag/Au, Ni/Au, and Cr/Au. A remarkable enhancement in FET performance could be achieved after the PLA treatment.

Rational Design of Phase-Engineered WS/WSe Heterostructures by Low-Temperature Plasma-Assisted Sulfurization and Selenization toward Enhanced HER Performance.

Efficient hydrogen generation from water splitting underpins chemistry to realize hydrogen economy. The electrocatalytic activity can be effectively modified by two-dimensional (2D) heterostructures, which offer great flexibility. Furthermore, they are useful in enhancing the exposure of the active sites for the hydrogen evolution reaction.