Broadband Packaged Erbium-Doped Polycrystalline AlO Waveguide Amplifier with 24 dB External Net Gain.

We present a packaged erbium-doped waveguide amplifier (EDWA) based on polycrystalline AlO, demonstrating high external fiber-to-fiber gain, stable performance over a broad wavelength range, and robustness to temperature variations. The device was integrated with fiber arrays and thermoelectric control, facilitating efficient characterization and practical deployment. With bidirectional pumping at 1480 nm, a 50 cm long waveguide amplifier achieves an external net gain of 24 dB and an off-chip output power exceeding 54 mW at 1550 nm.

Monolithically integrated erbium-doped polycrystalline AlO waveguide amplifier on silicon photonics platform.

We demonstrated the monolithic integration of a polycrystalline AlO:Er waveguide amplifier onto the passive SiN TriPleX platform, enabling high-performance on-chip amplification for photonic integrated circuits. The polycrystalline AlO:Er was deposited using reactive magnetron co-sputtering, ensuring compatibility with large-scale fabrication. On-chip wavelength division multiplexers, based on directional couplers, enabled the combining and splitting of the pump and signal powers on-chip.

Scalable erbium-doped waveguide amplifier with external fiber-to-fiber gain using reactively sputtered polycrystalline aluminium oxide.

We demonstrate reactively sputtered polycrystalline AlO:Er waveguide amplifiers exhibiting external fiber-to-fiber net gain, broadband amplification, and low noise figure. With an erbium concentration of 1.5 × 10 ions/cm, a 30 cm amplifier length, and bi-directional pumping at 1480 nm, > 14 dB of external gain at 1550 nm is shown with off-chip output powers of over 56 mW measured at the output fiber, as well as sustained gain across 60 nm of bandwidth.

Demonstration of passive, nonlinear, and active devices on a hybrid photonic platform.

The monolithic fabrication of passive, nonlinear, and active functionalities on a single chip is highly desired in the wake of the development and commercialization of integrated photonic platforms. However, the co-integration of diverse functionalities has been challenging as each platform is optimized for specific applications, typically requiring different structures and fabrication flows. In this article, we report on a monolithic and complementary metal-oxide-semiconductor CMOS-compatible hybrid wafer-scale photonics platform that is suitable for linear, nonlinear, and active photonics based on moderate confinement 0.

Thick waveguides of low-stress stoichiometric silicon nitride on sapphire (SiNOS).

Low-stress stoichiometric silicon nitride (SiN) waveguides with an unprecedented thickness of up to 1350 nm and a width in the range of 2.2 - 2.7 µm are fabricated using a single LPCVD step on sapphire substrates (SiNOS).