Magnetically stimulated transient creep processes in a heterogeneous aluminum alloy with ferromagnetic inclusions.

This study analyzes the creep processes of a heterogeneous aluminum alloy containing ferromagnetic inclusions with an average size of 3-5 μm, and the influence of preliminary magnetic exposure (in a constant magnetic field (MF) with induction B < 0.75 T) on these processes. Experimental investigations were carried out to determine the characteristic times of the transient stages of short-term creep, which do not exceed approximately 25 ms.

Development of thermal memory cells on silicon using the floating zero algorithm.

In this article, we investigate the development and use of thermal memory elements based on thin-film aluminum devices on silicon wafer. To stabilize their operation and reduce the number of errors during the read/write process of thermal information in such devices, we propose an algorithm (referred to as the floating zero algorithm) for adjusting the temperature conditions of thermal memory cells. This algorithm controls the thermal memory cells on silicon under varying ambient temperature conditions.