Nanosheets Derived from Titanium Diboride as Gate Insulators for Atomically Thin Transistors.

Development and integration of gate insulators that offer a low equivalent oxide thickness (EOT) while maintaining a physically thicker layer are critical for advancing transistor technology as device dimensions continue to shrink. Such materials can deliver high gate capacitance and yet reduce gate leakage, thereby minimizing static power dissipation without compromising performance. These insulators should also provide the necessary interface quality, thermal stability, switching endurance, and reliability.

Vacancy Rich TiB Nanosheets Promote Electrochemical Ammonia Synthesis.

The ability to exfoliate transition metal diborides has led to a renewed interest in their prospect to be applied as catalysts for electrochemical reactions. This is due to an enhanced access to the unprecedented interfaces these nanomaterials offer. In this work, we show that nanosheets exfoliated from TiB exhibit vacancies that facilitate an excellent interface for catalyzing nitrogen reduction reaction (NRR).

Nitrogen adsorption charge transfer on vacancies created during surfactant assisted exfoliation of TiB.

Titanium diboride (TiB), a layered ceramic material, comprised of titanium atoms sandwiched in between honeycomb planes of boron atoms, exhibits a promising structure to utilize the rich chemistry offered by the synergy of titanium and boron. TiB has been primarily investigated and applied in its bulk form. This perspective is, however, fast evolving with a number of efforts aimed at exfoliating TiB.