Engineering Pb-free relaxor ferroelectric thin films for low voltage energy storage applications.

Pulsed power technologies demand dielectric capacitors that possess a high energy storage density and efficiency at low applied electric fields/voltages. In this work, we engineered the morphology of lead-free 0.85[0.

Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices.

Ferroelectric memory devices such as ferroelectric memristors, ferroelectric tunnel junctions, and field-effect transistors are considered among the most promising candidates for neuromorphic computing devices. The promise arises from their defect-independent switching mechanism, low energy consumption and high power efficiency, and important properties being aimed for are reliable switching at high speed, excellent endurance, retention, and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. Binary or doped binary materials have emerged over conventional complex-composition ferroelectrics as an optimum solution, particularly in terms of CMOS compatibility.