Publications by authors named "Alexandre Llopez"
Article Synopsis
- Ferroelectric Rashba semiconductors (FERSCs) like α-GeTe are key for developing advanced energy-efficient technologies focusing on spin-orbit coupling (SOC), a field known as spin-orbitronics.
- This study explores how the Rashba-SOC effect in α-GeTe films behaves as they become thinner, revealing that even at a thickness of just 1 nm, these films maintain a strong Rashba effect, measured to be 5.2 ± 0.5 eV·Å.
- The research employs angle-resolved photoemission spectroscopy (ARPES) and x-ray photoemission spectroscopy (XPS) to show that the presence of Sb atoms compensates for defects in the GeTe films
Epitaxial growth of WTe offers significant advantages, including the production of high-quality films, possible long-range in-plane ordering, and precise control over layer thicknesses. However, the mean island size of WTe grown by molecular beam epitaxy (MBE) in the literature is only a few tens of nanometers, which is not suitable for the implementation of devices at large lateral scales. Here we report the growth of T -WTe ultrathin films by MBE on monolayer (ML) graphene, reaching a mean flake size of ≃110 nm, which is, on overage, more than three times larger than previous results.
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